Magnetization and Anisotropy of Cobalt Ferrite Thin Films
arXiv:1709.09965 · doi:10.1103/PhysRevMaterials.1.074413
Abstract
The magnetization of thin films of cobalt ferrite frequently falls far below the bulk value of 455 kAm-1, which corresponds to an inverse cation distribution in the spinel structure with a significant orbital moment of about 0.6 muB that is associated with the octahedrally-coordinated Co2+ ions. The orbital moment is responsible for the magnetostriction and magnetocrystalline anisotropy, and its sensitivity to imposed strain. We have systematically investigated the structure and magnetism of films produced by pulsed-laser deposition on different substrates (TiO2, MgO, MgAl2O4, SrTiO3, LSAT, LaAlO3) and as a function of temperature (500-700 C) and oxygen pressure (10-4 - 10 Pa). Magnetization at room-temperature ranges from 60 to 440 kAm-1, and uniaxial substrate-induced anisotropy ranges from +220 kJm-3 for films on deposited on MgO (100) to -2100 kJm-3 for films deposited on MgAl2O4 (100), where the room-temperature anisotropy field reaches 14 T. No rearrangement of high-spin Fe3+ and Co2+ cations on tetrahedral and octahedral sites can reduce the magnetization below the bulk value, but a switch from Fe3+ and Co2+ to Fe2+ and low-spin Co3+ on octahedral sites will reduce the low-temperature magnetization to 120 kAm-1, and a consequent reduction of Curie temperature can bring the room-temperature value to near zero. Possible reasons for the appearance of low-spin cobalt in the thin films are discussed. Keywords; Cobalt ferrite, thin films, pulsed-laser deposition, low-spin Co3+, strain engineering of magnetization.
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Cited by in corpus (6)
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- Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties
- Colossal intrinsic exchange bias in epitaxial CoFe2O4/Al2O3 thin films
- Strain Engineering of Magnetic Anisotropy in Epitaxial Films of Cobalt Ferrite
- On the complexity of spinels: Magnetic, electronic, and polar ground states
- Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques