3 citations · 3 across the 1 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2019★ 3 cited
Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
Phillip Dang, Zexuan Zhang, Joseph Casamento +6
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque fie…
physics.app-ph2019
Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory
Xiang Li, Phillip Dang, Joseph Casamento +8
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large…