Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator
arXiv:2006.04035 · doi:10.1103/PhysRevLett.125.017204
Abstract
This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 K to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.
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- Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2
- Effects of Crystalline Disorder on Interfacial and Magnetic Properties of Sputtered Topological Insulator/Ferromagnet Heterostructures
- Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers
- Dynamical magnetoelectric coupling in axion insulator thin films
- Interface Engineering Enabled Low Temperature Growth of Magnetic Insulator on Topological Insulator
- Edge optical effect as a probe of chiral topological superconductors
- Enhancement of Curie Temperature in Ferromagnetic Insulator-Topological Insulator Heterostructures
- Second-order topological insulator induced by compensated altermagnetism without bulk spin splitting
- Dominant superconducting correlations in a Luttinger liquid induced by spin fluctuations