38 citations · 117 across the 12 of their papers we have counts for
12 papers
Enhanced Superconductivity in Multilayer FeSe Films by Simplified Molecular Beam Epitaxy
Maria Hilse, Hemian Yi, Zhe Chen +7
Multi-unit-cell (UC) \b{eta}-FeSe films grown on SrTiO3(100) continue to attract attention because of the significant enhancement in the superconducting transition temperature (Tc)…
Transport Evidence of Magnetic Polarization in the Altermagnetic Candidate MnTe
Younes Ghorbani, Nayana Devaraj, Joshua Maile +7
The ability to precisely control magnetic properties is central to the development of future spin-based electronics. In this work, we report the successful growth of epitaxial α-Mn…
Molecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation
Qihua Zhang, Ke Wang, Wesley Auker +2
The weak van der Waals (vdW) force in layered chalcogenide materials has enabled the growth of ternary chalcogenide layers using unconventional approaches. Here, we report the mole…
Molecular Beam Epitaxy Growth of Wafer-scale SnSe van der Waals Ultrathin Layers
Qihua Zhang, Maria Hilse, Joshua Bardsley +2
Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness i…
Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy
Qihua Zhang, Maria Hilse, Wesley Auker +2
Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its…
Mixed polytype/polymorph formation and its effects on the electronic properties in InSe films grown by molecular beam epitaxy on GaAs(111)B
Maria Hilse, Justin Rodriguez, Jennifer Gray +7
The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices…
Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications
Mingyu Yu, Maria Hilse, Qihua Zhang +3
Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated wit…
Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates
Mingyu Yu, Sahani Amaya Iddawela, Jiayang Wang +5
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material,…
Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator
Tao Liu, James Kally, Timothy Pillsbury +9
This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin fi…
Diffraction at GaAs/FeSi core/shell nanowires: the formation of nanofacets
Bernd Jenichen, Michael Hanke, Maria Hilse +3
GaAs/FeSi core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfa…
Facetted growth of Fe3Si shells around GaAs nanowires on Si(111)
Bernd Jenichen, Maria Hilse, Jens Herfort +1
GaAs nanowires and GaAs/Fe3Si core/shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microsco…
Real structure of lattice matched GaAs-Fe3Si core-shell nanowires
Bernd Jenichen, Maria Hilse, Jens Herfort +1
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microsco…