38 citations · 117 across the 12 of their papers we have counts for
4 papers · 1 filter
Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy
Qihua Zhang, Maria Hilse, Wesley Auker +2
Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its…
Mixed polytype/polymorph formation and its effects on the electronic properties in InSe films grown by molecular beam epitaxy on GaAs(111)B
Maria Hilse, Justin Rodriguez, Jennifer Gray +7
The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices…
Review of Nanolayered Post-transition Metal Monochalcogenides: Synthesis, Properties, and Applications
Mingyu Yu, Maria Hilse, Qihua Zhang +3
Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated wit…
Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates
Mingyu Yu, Sahani Amaya Iddawela, Jiayang Wang +5
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material,…