Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator

Abstract

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2-xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 K to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

References in corpus (3)

• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3
• Spin and orbital moments of nanoscale Fe3O4 epitaxial thin film on MgO/GaAs(100)

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• Above 400 K Robust Perpendicular Ferromagnetic Phase in a Topological Insulator
• Record-High Proximity-Induced Anomalous Hall Effect in (Bi${}_x$Sb${}_{1-x}$)2Te${}_3$ Thin Film Grown on CrGeTe${}_3$ Substrate
• Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator
• Absence of magnetic-proximity effect at the interface of Bi${}_2$Se${}_3$ and (Bi,Sb)${}_2$Te${}_3$ with EuS
• Ferromagnetic state above room temperature in a proximitized topological Dirac semimetal
• Exotic rare earth-based materials for emerging spintronic technology
• Spacer-layer-tunable magnetism and high-field topological Hall effect in topological insulator heterostructures
• Manipulating Spin-Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure $via$ Interface Engineering
• Strong spin-dephasing in a topological insulator - paramagnet heterostructure