Weak anti-localization in spin-orbit coupled lattice systems: effect of non-adiabatic transitions and estimation of spin relaxation length
arXiv:2106.02761 · doi:10.1103/PhysRevB.104.205404
Abstract
This study investigates the quantum correction effect on electrical conductivity using a two-dimensional Wolff Hamiltonian, which is an effective model of the spin-orbit coupling (SOC) lattice system. The non-adiabatic transition processes in impurity scattering suppress the weak anti-localization (WAL) effect. The WAL effect in the SOC lattice system strongly depends on the spin relaxation length when compared with the Hikami-Larkin-Nagaoka (HLN) theory. The spin relaxation length in Bi thin film is discussed.
8 pages, 6 figures
References in corpus (8)
- Weak localisation magnetoresistance and valley symmetry in graphene
- Anomalous Hall effect in 2D Dirac band: link between Kubo-Streda formula and semiclassical Boltzmann equation approach
- Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
- Observation of inverse spin Hall effect in bismuth selenide
- Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
- Transport Properties and Diamagnetism of Dirac Electrons in Bismuth
- Spin-Hall Effect and Diamagnetism of Dirac Electrons
- Spin-orbit scattering in quantum diffusion of massive Dirac fermions