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Zhengyang Zhao

18 papers hereh-index 192k citations53 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author3
  • middle author14

Across the 17 of 18 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall6
  • cs.ET5
  • cond-mat.mtrl-sci2
  • cs.AR2
  • physics.app-ph2
  • cs.CR1
same name
  • Zhengyang Zhao — 5 papers, h 2
  • Zhengyang Zhao — 2 papers, h 2
  • Zhengyang Zhao — 2 papers, h 2
  • Zhengyang Zhao — 1 paper
  • Zhengyang Zhao — 1 paper, h 4
  • Zhengyang Zhao — 1 paper, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20142021
most citedRoom-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

503 citations · 861 across the 17 of their papers we have counts for

collaborators
Showing 2016Show all

3 papers · 1 filter

cs.ET2016

CoMET: Composite-Input Magnetoelectric-based Logic Technology

Meghna G. Mankalale, Zhaoxin Liang, Zhengyang Zhao +3

This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a com…

cond-mat.mtrl-sci2016★ 14 cited

External-Field-Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole-Coupled Composite Structure

Zhengyang Zhao, Angeline Klemm Smith, Mahdi Jamali +1

Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. Howev…

cond-mat.mes-hall2016★ 100 cited

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Zhengyang Zhao, Mahdi Jamali, Noel D'Souza +4

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we d…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.