activity
20142021
most citedRoom-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

503 citations · 861 across the 17 of their papers we have counts for

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Showing 2018Show all

5 papers · 1 filter

cs.AR2018★ 3 cited

Computational RAM to Accelerate String Matching at Scale

Zamshed I. Chowdhury, S. Karen Khatamifard, Zhengyang Zhao +6

Traditional Von Neumann computing is falling apart in the era of exploding data volumes as the overhead of data transfer becomes forbidding. Instead, it is more energy-efficient to…

cs.ET2018★ 4 cited

PIMBALL: Binary Neural Networks in Spintronic Memory

Salonik Resch, S. Karen Khatamifard, Zamshed Iqbal Chowdhury +5

Neural networks span a wide range of applications of industrial and commercial significance. Binary neural networks (BNN) are particularly effective in trading accuracy for perform…

cs.ET2018★ 45 cited

SkyLogic - A proposal for a skyrmion logic device

Meghna G. Mankalale, Zhengyang Zhao, Jian-Ping Wang +1

This work proposes a novel logic device (SkyLogic) based on skyrmions, which are magnetic vortex-like structures that have low depinning current density and are robust to defects.…

physics.app-ph2018★ 4 cited

Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques

Mengxing Wang, Wenlong Cai, Daoqian Zhu +11

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…

cond-mat.mtrl-sci2018★ 34 cited

L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

De-Lin Zhang, Congli Sun, Yang Lv +5

Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic m…