Large field-like torque in amorphous Ru2Sn3 originated from the intrinsic spin Hall effect
arXiv:2009.06711 · doi:10.1103/PhysRevMaterials.5.045003
Abstract
We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered Ru2Sn3 (4 and 10 nm) /Co20Fe60B20 (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature damping-like and field-like spin torque efficiencies of the amorphous Ru2Sn3 films were measured to be 0.14 +- 0.008 (0.07 +- 0.012) and -0.03 +- 0.006 (-0.20 +- 0.009), for the 4 (10 nm) films respectively, by utilizing the second harmonic Hall technique. The large field-like torque in the relatively thicker Ru2Sn3 (10 nm) thin film is unique compared to the traditional spin Hall materials interfaced with thick magnetic layers with in-plane magnetic anisotropy which typically have dominant damping-like and negligible field-like torques. Additionally, the observed room temperature field-like torque efficiency in Ru2Sn3 (10 nm)/CoFeB (5 nm) is up to three times larger than the damping-like torque (-0.20 +- 0.009 and 0.07 +- 0.012, respectively) and thirty times larger at 50 K (-0.29 +- 0.014 and 0.009 +- 0.017, respectively). The temperature dependence of the field-like torques show dominant contributions from the intrinsic spin Hall effect while the damping-like torques show dominate contributions from the extrinsic spin Hall effects, skew scattering and side jump. Through macro-spin calculations, we found that including field-like torques on the order or larger than the damping-like torque can reduce the switching critical current and decrease magnetization procession for a perpendicular ferromagnetic layer.
arXiv commentSubmitted to Physical Review Materials
References in corpus (25)
- Topological Insulators
- Spin torque switching with the giant spin Hall effect of tantalum
- New Perspectives for Rashba Spin-Orbit Coupling
- Magnetic switching by spin torque from the spin Hall effect
- Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3
- Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
- Layer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO
- Quantitative characterization of the spin orbit torque using harmonic Hall voltage measurements
- Proper Scaling of the Anomalous Hall Effect
- Dependence of the Efficiency of Spin Hall Torque on the Transparency of Pt-Ferromagnetic Layer Interfaces
- Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material
- Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal metal bilayers
- Fermi level dependent charge-to-spin current conversion by Dirac surface state of topological insulators
- Spin Hall magnetoresistance in metallic bilayers
- Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition-Metal Dichalcogenide/Ferromagnet Bilayers
- Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers
- Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3
- Correlation between the spin Hall angle and the structural phases of early 5d transition metals
- On the origin of field-like spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures
- Spin Hall Switching of the Magnetization in Ta/TbFeCo Structures with Bulk Perpendicular Anisotropy
- Anomalous temperature dependence of current induced torques in CoFeB|MgO heterostructures with Ta based underlayers
- Voltage and Energy-Delay Performance of Giant Spin Hall Effect Switching for Magnetic Memory and Logic
- Unveiling the mechanisms of the spin Hall effect in Ta
- Spin Swapping Transport and Torques in Ultrathin Magnetic Bilayers
- Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature