Investigation of domain wall pinning by square anti-notches and its applications in three terminals MRAM
arXiv:1905.04504 · doi:10.1063/1.5089949
Abstract
In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are presented. This allow us the proposition of a three-terminals device based on domain-wall pinning. We obtain, with very small pulses of current applied parallel to the nanotrack, a fast motion of the domain-wall between anti-notches. In addition to this, a swift stabilization of the pinned domain-wall is observed with a high percentage of orthogonal magnetization, enabling high magnetoresistive signal measurement. Thus, our proposed device is a promising magnetoresistive random access memories with good scalability, duration, and high speed information storage.
References in corpus (9)
- Roles of non-equilibrium conduction electrons on magnetization dynamics of ferromagnets
- Micromagnetic understanding of current-driven domain wall motion in patterned nanowires
- Ultrafast magnetization switching by spin-orbit torques
- Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction
- Ultra-fast perpendicular Spin Orbit Torque MRAM
- Theory of current-driven magnetization dynamics in inhomogeneous ferromagnets
- Thickness dependence of the degree of spin polarization of the electrical current in permalloy thin films
- Boosting Domain Wall Propagation by Notches
- Creation,transport and detection of imprinted magnetic solitons stabilized by spin-polarized current