activity
20062017
most citedLayer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO

917 citations · 2.9k across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.str-el2017★ 17 cited

Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial LaSrMnO thin film

Shao-Pin Chiu, Michihiko Yamanouchi, Tatsuro Oyamada +2

Epitaxial LaSrMnO (LSMO) films have been grown on SrTiO (001) substrates via pulsed laser deposition. In a 22-nm thick LSMO film with a low residual resisti…

cond-mat.mtrl-sci2017

Current-induced effective magnetic field in a half-metallic oxide La0.67Sr0.33MnO3

Michihiko Yamanouchi, Tatsuro Oyamada, Takayoshi Katase +1

We investigated current-induced effective magnetic field Heff in half-metallic oxide La0.67Sr0.33MnO3 (LSMO) films with various thicknesses by using the planar Hall effect. Applyin…

cond-mat.mes-hall2014★ 112 cited

Anomalous temperature dependence of current induced torques in CoFeB|MgO heterostructures with Ta based underlayers

Junyeon Kim, Jaivardhan Sinha, Seiji Mitani +5

We have studied the underlayer thickness and temperature dependences of the current induced effective field in CoFeB|MgO heterostructures with Ta based underlayers. The underlayer…

cond-mat.mes-hall2014★ 414 cited

Interface control of the magnetic chirality in CoFeB|MgO heterosctructures with heavy metal underlayers

Jacob Torrejon, Junyeon Kim, Jaivardhan Sinha +4

Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyalosh…

cond-mat.mes-hall2013★ 603 cited

Quantitative characterization of the spin orbit torque using harmonic Hall voltage measurements

Masamitsu Hayashi, Junyeon Kim, Michihiko Yamanouchi +1

Solid understanding of current induced torques is key to the development of current and voltage controlled magnetization dynamics in ultrathin magnetic heterostructures. To evaluat…

cond-mat.mes-hall2013★ 2 cited

Interface control of the magnetic chirality in TaN|CoFeB|MgO heterosctructures

Jacob Torrejon, Junyeon Kim, Jaivardhan Sinha +4

Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyalosh…

cond-mat.mtrl-sci2013★ 132 cited

Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

Jaivardhan Sinha, Masamitsu Hayashi, Andrew J. Kellock +8

We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation…

cond-mat.mtrl-sci2012★ 110 cited

CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions

H. Sato, M. Yamanouchi, K. Miura +4

Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknes…

cond-mat.mtrl-sci2012★ 917 cited

Layer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO

Junyeon Kim, Jaivardhan Sinha, Masamitsu Hayashi +5

The role of current induced effective magnetic field in ultrathin magnetic heterostructures is increasingly gaining interest since it can provide efficient ways of manipulating mag…

cond-mat.mtrl-sci2012★ 151 cited

Domain structure in CoFeB thin films with perpendicular magnetic anisotropy

M. Yamanouchi, A. Jander, P. Dhagat +3

Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain wal…

cond-mat.mtrl-sci2008★ 93 cited

Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB based synthetic ferrimagnetic free layers

Jun Hayakawa, Shoji Ikeda, Katsuya Miura +12

We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), part…

cond-mat.mtrl-sci2006★ 242 cited

Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

M. Yamanouchi, D. Chiba, F. Matsukura +2

Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicula…

cond-mat.mtrl-sci2006★ 86 cited

Domain-wall resistance in ferromagnetic (Ga,Mn)As

D. Chiba, M. Yamanouchi, F. Matsukura +2

A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributi…