917 citations · 2.9k across the 13 of their papers we have counts for
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Current-induced effective magnetic field in a half-metallic oxide La0.67Sr0.33MnO3
Michihiko Yamanouchi, Tatsuro Oyamada, Takayoshi Katase +1
We investigated current-induced effective magnetic field Heff in half-metallic oxide La0.67Sr0.33MnO3 (LSMO) films with various thicknesses by using the planar Hall effect. Applyin…
Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers
Jaivardhan Sinha, Masamitsu Hayashi, Andrew J. Kellock +8
We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation…
CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions
H. Sato, M. Yamanouchi, K. Miura +4
Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknes…
Layer thickness dependence of the current induced effective field vector in Ta|CoFeB|MgO
Junyeon Kim, Jaivardhan Sinha, Masamitsu Hayashi +5
The role of current induced effective magnetic field in ultrathin magnetic heterostructures is increasingly gaining interest since it can provide efficient ways of manipulating mag…
Domain structure in CoFeB thin films with perpendicular magnetic anisotropy
M. Yamanouchi, A. Jander, P. Dhagat +3
Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain wal…
Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB based synthetic ferrimagnetic free layers
Jun Hayakawa, Shoji Ikeda, Katsuya Miura +12
We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), part…
Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
M. Yamanouchi, D. Chiba, F. Matsukura +2
Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicula…
Domain-wall resistance in ferromagnetic (Ga,Mn)As
D. Chiba, M. Yamanouchi, F. Matsukura +2
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributi…