Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La${}_{2/3}$Sr${}_{1/3}$MnO${}_3$ thin film

Abstract

Epitaxial La${}_{2/3}$Sr${}_{1/3}$MnO${}_3$ (LSMO) films have been grown on SrTiO${}_3$ (001) substrates via pulsed laser deposition. In a 22-nm thick LSMO film with a low residual resistivity of ${\rho }_0$ = 59 $\mu \Omega$ cm, we found a zero-field dip in the magnetoresistance (MR) below 10 K, manifesting the weak antilocalization (WAL) effect due to strong spin-orbit coupling (SOC). We have analyzed the MR data by including the D'yakonov-Perel' spin-relaxation mechanism in the WAL theory. We explain that the delocalized spin-down electron subband states play a crucial role for facilitating marked SOC in clean LSMO. Moreover, we find that the SOC strength and gate voltage tunability is similar to that in the 2DEG at LaAlO${}_3$/SrTiO${}_3$ interface, indicating the presence of an internal electric field near the LSMO/SrTiO${}_3$ interface. In a control measurement on a 5-nm thick high resistivity (${\rho }_0$ = 280 $\mu \Omega$ cm) LSMO film, we observe only a small zero-field peak in MR from weak localization effect, indicating negligible SOC.

18 pages, 5 figures

References in corpus (8)

• Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films
• Evidence of orbital reconstruction at interfaces in La0.67Sr0.33MnO3 films
• Termination Control of the Interface Dipole in La${}_{0.7}$Sr${}_{0.3}$MnO${}_3$/Nb:SrTiO${}_3$ (001) Schottky Junctions
• Strong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures
• Weak localization in ferromagnetic (Ga,Mn)As nanostructures
• Evolution of the band alignment at polar oxide interfaces
• Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in La${}_{1-x}$Sr${}_x$MnO${}_3$
• Magnetic order and valency at La${}_{0.7}$Sr${}_{0.3}$MnO${}_3$/SrTiO${}_3$ interfaces

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