Termination Control of the Interface Dipole in LaSrMnO/Nb:SrTiO (001) Schottky Junctions
arXiv:0810.3084 · doi:10.1103/PhysRevB.79.073101
Abstract
In order to investigate the interface termination dependence of perovskite band alignments, we have studied the Schottky barrier height at LaSrMnO/Nb:SrTiO (001) heterointerfaces. As the Nb:SrTiO semiconductor was varied from TiO termination to SrO termination by variable insertion of a SrMnO layer, a large systematic increase in the Schottky barrier height was observed. This can be ascribed to the evolution of the interface dipole induced to screen the polar discontinuity at the interface, which gives a large internal degree of freedom for tuning band diagrams in oxides.
arXiv comment10 pages, 5 figures
References in corpus (9)
- Orbital order and possible superconductivity in LaNiO3/LaMO3 superlattices
- Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
- Electronic reconstruction at SrMnO3-LaMnO3 superlattice interfaces
- Electron Doping of Cuprates via Interfaces with Manganites
- Magnetocapacitance and exponential magnetoresistance in manganite-titanate heterojunctions
- Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions
- Lattice polarization effects on electron-gas charge densities in ionic superlattices
- Modulation Doping near Mott-Insulator Heterojunctions
- Strongly renormalized quasi-two-dimensional electron gas in a heterostructure with correlation effects
Cited by in corpus (24)
- Emergent properties hidden in plane view: Strong electronic correlations at oxide interfaces
- Prediction of electrically-induced magnetic reconstruction at the manganite/ferroelectric interface
- Built-in and induced polarization across LaAlO/SrTiO heterojunctions
- Optimized fabrication of high quality La0.67Sr0.33MnO3 thin films considering all essential characteristics
- Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures
- Preventing the reconstruction of the polar discontinuity at oxide heterointerfaces
- Determining the Curie temperature of La0.67Sr0.33MnO3 thin films
- The origin of the dead-layer at the La0.67Sr0.33MnO3/SrTiO3 interface and dead-layer reduction via interfacial engineering
- Strain-controlled band engineering and self-doping in ultrathin LaNiO films
- Evolution of the band alignment at polar oxide interfaces
- Orientation dependence of the Schottky barrier height for LaSrMnO/SrTiO heterojunctions
- Structural Distortions At Polar Manganite Interfaces
- Visualizing nanoscale electronic band alignment at the LaCaMnO/Nb:SrTiO interface
- Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale
- Hot electron transport in a strongly correlated transition metal oxide
- Polarization-controlled modulation doping of a ferroelectric from first principles
- Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial LaSrMnO thin film
- Electric control of spin injection into a ferroelectric semiconductor
- Optimal interface doping at La_2/3Sr_1/3MnO_3/SrTiO_3(001) heterojunctions for spintronic applications
- Insulating-to-Conducting Behavior and Band Profile Across the La0.9Ba0.1MnO3/Nb:SrTiO3 Epitaxial Interface
- Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3
- Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures
- Interface combinatorial pulsed laser deposition to enhance heterostructures functional properties
- Point contact investigations of film and interface magnetoresistance of LaSrMnO heterostructures on Nb:SrTiO