Termination Control of the Interface Dipole in La${}_{0.7}$Sr${}_{0.3}$MnO${}_3$/Nb:SrTiO${}_3$ (001) Schottky Junctions

Abstract

In order to investigate the interface termination dependence of perovskite band alignments, we have studied the Schottky barrier height at La${}_{0.7}$Sr${}_{0.3}$MnO${}_3$/Nb:SrTiO${}_3$ (001) heterointerfaces. As the Nb:SrTiO${}_3$ semiconductor was varied from TiO${}_2$ termination to SrO termination by variable insertion of a SrMnO${}_3$ layer, a large systematic increase in the Schottky barrier height was observed. This can be ascribed to the evolution of the interface dipole induced to screen the polar discontinuity at the interface, which gives a large internal degree of freedom for tuning band diagrams in oxides.

10 pages, 5 figures

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• Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
• Electronic reconstruction at SrMnO3-LaMnO3 superlattice interfaces
• Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions
• Lattice polarization effects on electron-gas charge densities in ionic superlattices
• Modulation Doping near Mott-Insulator Heterojunctions
• Strongly renormalized quasi-two-dimensional electron gas in a heterostructure with correlation effects

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• Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale
• Hot electron transport in a strongly correlated transition metal oxide
• Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La${}_{2/3}$Sr${}_{1/3}$MnO${}_3$ thin film
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• Insulating-to-Conducting Behavior and Band Profile Across the La0.9Ba0.1MnO3/Nb:SrTiO3 Epitaxial Interface
• Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures
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