Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures
arXiv:1203.4406 · doi:10.1063/1.3691599
Abstract
Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form ΔG/G = CI^A t^B. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength.
Communication