Strain-controlled band engineering and self-doping in ultrathin LaNiO${}_3$ films

Abstract

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO${}_3$ films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the transport coefficients evolve in a manner strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in the transport properties are due to self-doping in the low-energy electronic band structure. The results imply that thin-film epitaxy can serve as a new means to achieve hole-doping in other (negative) charge-transfer gap transition metal oxides without resorting to chemical substitution.

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Cited by in corpus (12)

• Physics of ultrathin films and heterostructures of rare earth nickelates
• Multiple strain-induced phase transitions in LaNiO3 thin films
• Orbital Polarization in Strained LaNiO${}_3$: Structural Distortions and Correlation Effects
• Octahedral Engineering of Orbital Polarizations in Charge Transfer Oxides
• Field-effect diode based on electron-induced Mott transition in NdNiO3
• Epitaxial strain modulated electronic properties of interface controlled nickelate superlattice
• Dimensionality-tuned electronic structure of nickelate superlattices explored by soft-x-ray angle resolved photoelectron spectroscopy
• Close correlation between superconducting transition temperatures and carrier densities in Te- and S-substituted FeSe thin films
• Spin-Resolved Self-Doping Tunes the Intrinsic Half-Metallicity of AlN Nanoribbons
• Electronic structure of buried LaNiO3 layers in (111)-oriented LaNiO3/LaMnO3 superlattices probed by soft x-ray ARPES
• Enhancement of the thermoelectric power by electronic correlations in bad metals: a study of the Kelvin formula
• Hard x-ray photoemission study on strain effect in LaNiO${}_3$ thin films