Field-effect diode based on electron-induced Mott transition in NdNiO3

Abstract

We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron doping on the metal-insulator transition.

4 pages, 5 Figures

References in corpus (9)

• Electron pockets in the Fermi surface of hole-doped high-Tc superconductors
• Observation of Mott Transition in VO_2 Based Transistors
• Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
• Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3
• Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors
• Strain-controlled band engineering and self-doping in ultrathin LaNiO${}_3$ films
• Depth-Resolved Subsurface Defects in Chemically Etched SrTiO3
• Extension of the Brinkman-Rice picture and the Mott transition
• Sub-monolayer nucleation and growth of complex oxide heterostructures at high supersaturation and rapid flux modulation

Cited by in corpus (4)

• Strain mediated suppression of the metal-insulator transition in EuNiO3 thin films
• Flexible Transparent Field-Effect Diodes Fabricated at Low-Temperature with All Oxide Materials
• Unraveling the role of V-V dimer on the vibrational properties of VO${}_2$ by first-principles simulations and Raman spectroscopic analysis
• Epitaxial Stabilization of Ultrathin Films of Rare-Earth Nickelates