Epitaxial Stabilization of Ultrathin Films of Rare-Earth Nickelates
arXiv:1112.5348 · doi:10.1088/0022-3727/46/38/385303
Abstract
We report on the synthesis of ultrathin films of highly distorted EuNiO3 (ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates. Through mapping the phase space of nickelate thin film epitaxy, the optimal growth temperatures were found to scale linearly with the Goldschmidt tolerance factor. Considering the gibbs energy of the expanding film, this empirical trend is discussed in terms of epitaxial stabilization and the escalation of the lattice energy due to lattice distortions and decreasing symmetry. These findings are fundamental to other complex oxide perovskites, and provide a route to the synthesis of other perovskite structures in ultrathin-film form.
7 pages, 3 figures
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Cited by in corpus (9)
- Physics of ultrathin films and heterostructures of rare earth nickelates
- Tuning bad metal and non-Fermi liquid behavior in a Mott material: rare earth nickelate thin films
- Electronic Transitions in Strained SmNiO_3 Thin Films
- Hybridization-switching induced Mott transition in ABO perovskites
- Epitaxial strain modulated electronic properties of interface controlled nickelate superlattice
- Epitaxial stabilization of ultra thin films of electron doped manganites
- Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
- Superconducting phase diagram of multi-layer square-planar nickelates
- Probing electronic and magnetic transitions of short periodic nickelate superlattices using synchrotron x-ray