Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity

Abstract

We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient is observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole-doping in oxide thin film heterostructures.

16 pages, 7 figures

References in corpus (6)

• Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping
• Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
• Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4
• A Surface Reconstruction with a Fractional Hole: $(\sqrt{5}\times \sqrt{5})R26.6^{\circ }$ LaAlO${}_3$ (001)
• Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers
• Spin, Orbital and Charge Order at the Interface between Correlated Oxides

Cited by in corpus (1)

• Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy