Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity

Abstract

We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient is observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole-doping in oxide thin film heterostructures.

16 pages, 7 figures

References in corpus (10)

• Why Some Interfaces Cannot be Sharp
• The role of oxygen vacancies in SrTiO3 at the LaAlO3/SrTiO3 interface
• Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping
• Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
• Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4
• A Surface Reconstruction with a Fractional Hole: $(\sqrt{5}\times \sqrt{5})R26.6^{\circ }$ LaAlO${}_3$ (001)
• Modulation Doping near Mott-Insulator Heterojunctions
• Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers
• Spin, Orbital and Charge Order at the Interface between Correlated Oxides
• Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

Cited by in corpus (13)

• Charge writing at the LaAlO3/SrTiO3 surface
• A heterojunction modulation-doped Mott transistor
• Toward an artificial Mott insulator: Correlations in confined, high-density electron liquids in SrTiO3
• Electronic charges and electric potential at LaAlO3/SrTiO3 interfaces studied by core-level photoemission spectroscopy
• Seebeck effect in the conducting LaAlO_{3}/SrTiO_{3} interface
• Two-Dimensional Confinement of 3d1 Electrons in LaTiO3/LaAlO3 Multilayers
• Probing the metal-insulator transition of NdNiO3 by electrostatic doping
• Strain-controlled band engineering and self-doping in ultrathin LaNiO${}_3$ films
• Effect of polar discontinuity on the growth of LaNiO3/LaAlO3 superlattices
• Self-consistent iteration procedure in analyzing reflectivity and spectroscopic ellipsometry data of multilayered materials and their interfaces
• Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy
• Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott- and band insulators
• General considerations of the electrostatic boundary conditions in oxide heterostructures