Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy

Abstract

We present an x-ray absorption study of the dependence of the V oxidation state on the thickness of LaVO${}_3$ (LVO) and capping LaAlO${}_3$ (LAO) layers in the multilayer structure of LVO sandwiched between LAO. We found that the change of the valence of V as a function of LAO layer thickness can be qualitatively explained by a transition between electronically reconstructed interfaces and a chemical reconstruction. The change as a function of LVO layer thickness is complicated by the presence of a considerable amount of V${}^{4+}$ in the bulk of the thicker LVO layers.

11 pages, 4 figures

References in corpus (5)

• Why Some Interfaces Cannot be Sharp
• Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices
• Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
• Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers
• Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

Cited by in corpus (3)

• Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films
• Resonant inelastic x-ray scattering study of doping and temperature dependence of low-energy excitations in La${}_{1-x}$Sr${}_x$VO${}_3$
• Tailoring non-collinear magnetism and 3d $-$ 4f exchange interactions in RVO${}_3$ epitaxial thin films