Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions

Abstract

Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 wt % and 0.5 wt % Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure.

arXiv comment15 pages, 3 figures

References in corpus (2)

• Why Some Interfaces Cannot be Sharp
• Magnetocapacitance and exponential magnetoresistance in manganite-titanate heterojunctions

Cited by in corpus (10)

• Enhanced flexoelectricity at reduced dimensions revealed by mechanically tunable quantum tunnelling
• Electronic correlations, magnetism and Hund's rule coupling in the ruthenium perovskites SrRuO${}_3$ and CaRuO${}_3$
• Termination Control of the Interface Dipole in La${}_{0.7}$Sr${}_{0.3}$MnO${}_3$/Nb:SrTiO${}_3$ (001) Schottky Junctions
• Tuning the work function in transition metal oxides and their heterostructures
• Accumulation, inversion, and depletion layers in SrTiO${}_3$
• Orientation dependence of the Schottky barrier height for La${}_0.6$Sr${}_0.4$MnO${}_3$/SrTiO${}_3$ heterojunctions
• Negative Differential Resistance Induced by Mn Substitution at SrRuO3/Nb:SrTiO3 Schottky Interfaces
• Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface
• Magnetodielectric Coupling in Nonmagnetic Au/GaAs:Si Schottky Barriers
• Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions