activity
20092023
most citedThe role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas

38 citations · 250 across the 16 of their papers we have counts for

collaborators

16 papers

cond-mat.soft2023★ 6 cited

The effect of direct electron beam patterning on the water uptake and ionic conductivity of Nafion thin films

Ky V. Nguyen, Jan G. Gluschke, A. Bernardus Mostert +12

We report the effect of electron-beam patterning on the water uptake and ionic conductivity of Nafion films using a combination of x-ray photoelectron spectroscopy, quartz crystal…

physics.app-ph2017★ 31 cited

Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry

D. J. Carrad, A. B. Mostert, A. R. Ullah +8

A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the tw…

cond-mat.mes-hall2014★ 17 cited

Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics

Sofia Fahlvik Svensson, Adam M. Burke, Damon J. Carrad +3

We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometr…

cond-mat.mes-hall2014★ 8 cited

Using light and heat to controllably switch and reset disorder configuration in nanoscale devices

A. M. See, M. Aagesen, P. E. Lindelof +2

Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorde…

cond-mat.mes-hall2014★ 7 cited

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

S. J. MacLeod, A. M. See, Z. K. Keane +5

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single elect…

cond-mat.mes-hall2013★ 1 cited

Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot

D. J. Carrad, A. M. Burke, O. Klochan +6

We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin tempera…