Spectroscopy of bulk and few-layer superconducting NbSe${}_2$ with van der Waals tunnel junctions

Abstract

Tunnel junctions, a well-established platform for high-resolution spectroscopy of superconductors, require defect-free insulating barriers with clean engagement to metals on both sides. Extending the range of materials accessible to tunnel junction fabrication, beyond the limited selection which allows high-quality oxide formation, requires the development of alternative fabrication techniques. Here we show that van-der-Waals (vdW) tunnel barriers, fabricated by stacking layered semiconductors on top of the transition metal dichalcogenide (TMD) superconductor NbSe${}_2$, sustain a stable, low noise tunneling current, and exhibit strong suppression of sub-gap tunneling. We utilize the technique to measure the spectra of bulk (20 nm) and ultrathin (3- and 4-layer) devices at 70 mK. The spectra exhibit two distinct energy gaps, the larger of which decreases monotonously with thickness and $T_C$, in agreement with BCS theory. The spectra are analyzed using a two-band model modified to account for depairing. We show that in the bulk, the smaller gap exhibits strong depairing in an in-plane magnetic field, consistent with a high Fermi velocity. In the few-layer devices, depairing of the large gap is negligible, consistent with out-of-plane spin-locking due to Ising spin-orbit coupling. Our results demonstrate the utility of vdW tunnel junctions in mapping the intricate spectral evolution of TMD superconductors over a range of magnetic fields.

This submission contains the first part of arxiv:1703.07677 with the addition of spectra taken on this devices. The second part of 1703.07677 will be published separately

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• Boron nitride substrates for high-quality graphene electronics
• Atomically thin boron nitride: a tunnelling barrier for graphene devices
• Intrinsic atomic scale modulations of the superconducting gap of 2H-NbSe2
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