Phase slip lines in superconducting few-layer NbSe${}_2$ crystals

Abstract

We show the results of two-terminal and four-terminal transport measurements on few-layer NbSe${}_2$ devices at large current bias. In all the samples measured, transport characteristics at high bias are dominated by a series of resistance jumps due to nucleation of phase slip lines, the two dimensional analogue of phase slip centers. In point contact devices the relatively simple and homogeneous geometry enables a quantitative comparison with the model of Skocpol, Beasley and Tinkham. In extended crystals the nucleation of a single phase slip line can be induced by mechanical stress of a region whose width is comparable to the charge imbalance equilibration length.

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• Classifying induced superconductivity in atomically thin Dirac-cone materials
• Flux-flow instability across Berezinskii Kosterlitz Thouless phase transition in KTaO${}_3$ (111) based superconductor
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• Supercurrent and phase slips in a ballistic carbon nanotube embedded into a van der Waals heterostructure
• Anomalously high supercurrent density in a two-dimensional topological material
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