activity
20062023
most citedSpectroscopy of bulk and few-layer superconducting NbSe with van der Waals tunnel junctions

121 citations · 872 across the 24 of their papers we have counts for

collaborators

24 papers

cond-mat.supr-con2023

Interaction-driven quantum phase transition of a single magnetic impurity in Fe(Se,Te)

M. Uldemolins, A. Mesaros, G. D. Gu +4

Understanding the interplay between individual magnetic impurities and superconductivity is crucial for bottom-up construction of novel phases of matter. For decades, the descripti…

cond-mat.str-el2022★ 9 cited

Interplay of Hidden Orbital Order and Superconductivity in CeCoIn5

Weijiong Chen, Clara Neerup Breiø, Freek Massee +6

Visualizing atomic-orbital degrees of freedom is a frontier challenge in scanned microscopy. Some types of orbital order are virtually imperceptible to normal scattering techniques…

cond-mat.supr-con2021★ 23 cited

Coherent and incoherent tunneling into YSR states revealed by atomic scale shot-noise spectroscopy

Umamahesh Thupakula, Vivien Perrin, Alexandra Palacio-Morales +4

The pair breaking potential of individual magnetic impurities in s-wave superconductors generates localized states inside the superconducting gap commonly referred to as Yu- Shiba-…

cond-mat.str-el2021★ 5 cited

Tunable high speed atomic rotor in BiSe revealed by current noise

Léonard Desvignes, Vasily S. Stolyarov, Marco Aprili +1

The ability to manipulate individual atoms and molecules using a scanning tunnelling microscope (STM) has been crucial for the development of a vast array of atomic scale devices a…

cond-mat.supr-con2020★ 13 cited

Atomic manipulation of the gap in BiSrCaCuO

F. Massee, Y. K. Huang, M. Aprili

Single atom manipulation within doped correlated electron systems would be highly beneficial to disentangle the influence of dopants, structural defects and crystallographic charac…

cond-mat.str-el2018★ 21 cited

Noisy defects in a doped Mott insulator

F. Massee, Y. K. Huang, M. S. Golden +1

Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and…