Atomic manipulation of the gap in BiSrCaCuO
arXiv:2001.01733 · doi:10.1126/science.aaw7964
Abstract
Single atom manipulation within doped correlated electron systems would be highly beneficial to disentangle the influence of dopants, structural defects and crystallographic characteristics on their local electronic states. Unfortunately, their high diffusion barrier prevents conventional manipulation techniques. Here, we demonstrate the possibility to reversibly manipulate select sites in the optimally doped high temperature superconductor BiSrCaCuO using the local electric field of the tip. We show that upon shifting individual Bi atoms at the surface, the spectral gap associated with superconductivity is seen to reversibly change by as much as 15 meV (~5% of the total gap size). Our toy model that captures all observed characteristics suggests the field induces lateral movement of point-like objects that create a local pairing potential in the CuO2 plane.
arXiv commentPublished in Science, this is the originally submitted manuscript prior to changes during the review process
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Cited by in corpus (6)
- Presence of -wave pairing in Josephson junctions made of twisted ultrathin BiSrCaCuO flakes
- Atomically-precise engineering of spin-orbit polarons in a kagome magnetic Weyl semimetal
- Electronic inhomogeneity and band structure on superstructural CuO2 planes of infinite-layer Sr0.94La0.06CuO2+y films
- Tunable high speed atomic rotor in BiSe revealed by current noise
- First principle prediction of structural distortions in the cuprates and their impact on the electronic structure
- Cuprates, Pnictides and Sulfosalts: Lessons in Functional Materials