929 citations · 2.1k across the 14 of their papers we have counts for
15 papers
Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth
Hanlin Wu, Sheng Li, Zheng Wu +6
In this work, we have thoroughly studied the effects of flux composition and temperature on the crystal growth of the BaCu2As2 compound. While Pb and CuAs self-flux produce the wel…
Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires
Jing-Kai Qin, Pai-Ying Liao, Mengwei Si +15
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physica…
Atomically Controlled Tunable Doping in High Performance WSe2 Devices
Chin-Sheng Pang, Terry Y. T. Hung, Ava Khosravi +5
Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transp…
Environmentally Stable Room Temperature Continuous Wave Lasing in Defect-passivated Perovskite
Jiyoung Moon, Masoud Alahbakhshi, Abouzar Gharajeh +8
Metal halide perovskites have emerged as promising gain materials for on-chip lasers in photonic integrated circuits (PICs). However, stable continuous wave (CW) lasing behavior un…
Formation of Graphene atop a Si adlayer on the C-face of SiC
Jun Li, Qingxiao Wang, Guowei He +6
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6)…
Spacing Dependent and Doping Independent Superconductivity in Intercalated 1T Two Dimensional SnSe2
Hanlin Wu, Sheng Li, Michael Susner +4
The weak van der Waals interlayer interactions in the transition metal dichalcogenide (TMD) materials have created a rich platform to study their exotic electronic properties throu…
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
Chun-Li Lo, Massimo Catalano, Ava Khosravi +9
The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable…
Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films
Tingting Shen, Daniel Valencia, Qingxiao Wang +6
Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electr…
Two-Dimensional h-BN and MoS2 as Diffusion Barriers for Ultra-Scaled Copper Interconnects
Chun-Li Lo, Massimo Catalano, Kirby K. H. Smithe +5
Copper interconnects in modern integrated circuits require ultra-thin barriers to prevent intermixing of Cu with surrounding dielectric materials. Conventional barriers rely on met…
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
G. William Burg, Nitin Prasad, Babak Fallahazad +8
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe l…
MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates
Suresh Vishwanath, Aditya Sundar, Xinyu Liu +17
MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic…
Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang, Gang Qiu, Ruoxing Wang +9
The reliable production of two-dimensional crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a var…
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Angelica Azcatl, Xiaoye Qin, Abhijith Prakash +11
Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for…
Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
Devashish P. Gopalan, Patrick C. Mende, Sergio C. de la Barrera +10
Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the…
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou +10
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we presen…