Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS${}_2$/2H-MoS${}_2$ T-Junction

Abstract

Metal-based electronics is attractive for fast and radiation-hard electronic circuits and remains one of the longstanding goals for researchers. The emergence of 1T-TaS${}_2$, a layered material exhibiting strong charge density wave (CDW) driven resistivity switching that can be controlled by an external stimulus such as electric field and optical pulses, has triggered a renewed interest in metal-electronics. Here we demonstrate a negative differential resistor (NDR) using electrically driven CDW phase transition in an asymmetrically designed T-junction made up of 1T-TaS${}_2$/2H-MoS${}_2$ van der Waals heterostructure. The principle of operation of the proposed device is governed by majority carrier transport and is distinct from usual NDR devices employing tunneling of carriers, thus avoids the bottleneck of weak tunneling efficiency in van der Waals heterojunctions. Consequently, we achieve a peak current density in excess of $10^5$ nA$\mu$m${}^{-2}$, which is about two orders of magnitude higher than that obtained in typical layered material based NDR implementations. The peak current density can be effectively tuned by an external gate voltage as well as photo-gating. The device is robust against ambiance-induced degradation and the characteristics repeat in multiple measurements over a period of more than a month. The findings are attractive for the implementation of active metal-based functional circuits.

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Cited by in corpus (6)

• Out-of-plane transport of 1T-TaS2/graphene-based van der Waals heterostructures
• Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed
• Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature
• Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications
• Charge-Density-Wave Devices Printed with the Ink of Chemically Exfoliated 1T-TaS${}_2$ Fillers
• Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS${}_2$/2H-TaSe${}_2$/2H-MoS${}_2$ Heterostructure