800 citations · 2k across the 10 of their papers we have counts for
12 papers
Atomically Controlled Tunable Doping in High Performance WSe2 Devices
Chin-Sheng Pang, Terry Y. T. Hung, Ava Khosravi +5
Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transp…
Contact Engineering High Performance n-Type MoTe2 Transistors
Michal J. Mleczko, Andrew C. Yu, Christopher M. Smyth +7
Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains under-explored for 2D electronics…
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
Chun-Li Lo, Massimo Catalano, Ava Khosravi +9
The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable…
A Roadmap for Electronic Grade 2-Dimensional Materials
Natalie Briggs, Shruti Subramanian, Zhong Lin +17
Two dimensional (2D) materials continue to hold great promise for future electronics, due to their atomic-scale thicknesses and wide range of tunable properties. However, commercia…
MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates
Suresh Vishwanath, Aditya Sundar, Xinyu Liu +17
MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic…
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Angelica Azcatl, Xiaoye Qin, Abhijith Prakash +11
Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for…
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou +10
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we presen…
Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene
Suresh Vishwanath, Xinyu Liu, Sergei Rouvimov +8
We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial grap…
MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts
Steven Chuang, Corsin Battaglia, Angelica Azcatl +8
The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particul…
Electronic Properties of MoS2/HfO2 Interface: Impact of Interfacial Impurities during Atomic Layer Deposition Growth
Santosh KC, Roberto C. Longo, Robert M. Wallace +1
Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impac…
Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors
Cheng Gong, Hengji Zhang, Weihua Wang +3
Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalco…
Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer
Li Tao, Milo Holt, Jongho Lee +8
Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with im…