462 citations · 977 across the 9 of their papers we have counts for
9 papers
Electron-Induced Formation of C on Si(100) from Acetylene and Ethylene
Oliver MacLean, Marc Savoie, Damian G. Allis +12
Hydrogen Desorption Lithography on Si(100) demonstrates the ability of the Scanning Tunneling Microscope (STM) to create functional atomic-scale structures and devices. The dehydro…
Towards Atom-by-Atom Fabrication: Mechanosynthetic donation and abstraction
Brandon Blue, Mathieu Morin, Alex Inayeh +55
Enabled by inverted-mode scanning tunneling microscopy (IM-STM) and the use of functionalized molecular tools, we demonstrate positionally-controlled mechanosynthetic addition (don…
Atomically precise mechanosynthesis of carbon structures on hydrogenated Si(100) by inverted-mode STM
Megan Cowie, Chris Deimert, Ryan Groome +44
The ability to build atomically precise structures on surfaces with complete control over both atomic placement and chemical bonding remains a central challenge in nanoscale fabric…
Inverted-Mode Scanning Tunneling Microscopy for Atomically Precise Fabrication
Eduardo Barrera, Bheeshmon Thanabalasingam, Rafik Addou +57
Scanning Tunneling Microscopy (STM) enables fabrication of atomically precise structures with unique properties and growing technological potential. However, reproducible manipulat…
Molecular Tools for Non-Planar Surface Chemistry
Taleana Huff, Brandon Blue, Terry McCallum +30
Scanning probe microscopy (SPM) investigations of on-surface chemistry on passivated silicon have only shown in-plane chemical reactions, and studies on bare silicon are limited in…
Atomically Controlled Tunable Doping in High Performance WSe2 Devices
Chin-Sheng Pang, Terry Y. T. Hung, Ava Khosravi +5
Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transp…
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
Chun-Li Lo, Massimo Catalano, Ava Khosravi +9
The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable…
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Angelica Azcatl, Xiaoye Qin, Abhijith Prakash +11
Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for…
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou +10
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we presen…