462 citations · 977 across the 9 of their papers we have counts for
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physics.app-ph2019★ 106 cited
Atomically Controlled Tunable Doping in High Performance WSe2 Devices
Chin-Sheng Pang, Terry Y. T. Hung, Ava Khosravi +5
Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transp…
cond-mat.mtrl-sci2019
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
Chun-Li Lo, Massimo Catalano, Ava Khosravi +9
The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable…