activity
20162020
most citedPhase Field Modeling of Domain Dynamics and Polarization Accumulation in Ferroelectric HZO

100 citations · 102 across the 2 of their papers we have counts for

collaborators

6 papers

physics.app-ph2020

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

Mengwei Si, Joseph Andler, Xiao Lyu +4

In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-curre…

cs.ET2020

A Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference

Arman Kazemi, Ramin Rajaei, Kai Ni +3

An analog synapse circuit based on ferroelectric-metal field-effect transistors is proposed, that offers 6-bit weight precision. The circuit is comprised of volatile least signific…

cs.LG20192 cited

Inherent Weight Normalization in Stochastic Neural Networks

Georgios Detorakis, Sourav Dutta, Abhishek Khanna +3

Multiplicative stochasticity such as Dropout improves the robustness and generalizability of deep neural networks. Here, we further demonstrate that always-on multiplicative stocha…

cs.ET2019

Design space exploration of Ferroelectric FET based Processing-in-Memory DNN Accelerator

Insik Yoon, Matthew Jerry, Suman Datta +1

In this letter, we quantify the impact of device limitations on the classification accuracy of an artificial neural network, where the synaptic weights are implemented in a Ferroel…

physics.app-ph2019100 cited

Phase Field Modeling of Domain Dynamics and Polarization Accumulation in Ferroelectric HZO

Atanu K Saha, Kai Ni, Sourav Dutta +2

In this work, we investigate the accumulative polarization (P) switching characteristics of ferroelectric (FE) thin films under the influence of sequential electric-field pulses. B…

cond-mat.mes-hall2016

Revisiting the theory of ferroelectric negative capacitance

Kausik Majumdar, Suman Datta, Satyavolu Papa Rao

In this paper we revisit the theory of negative capacitance, in a (i) standalone ferroelectric, (ii) ferroelectric-dielectric, and (iii) ferroelectric-semiconductor series combinat…