462 citations · 1.1k across the 16 of their papers we have counts for
Showing 2020Show all
2 papers · 1 filter
physics.app-ph2020★ 122 cited
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
Mengwei Si, Joseph Andler, Xiao Lyu +4
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-curre…
cs.ET2020
A Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference
Arman Kazemi, Ramin Rajaei, Kai Ni +3
An analog synapse circuit based on ferroelectric-metal field-effect transistors is proposed, that offers 6-bit weight precision. The circuit is comprised of volatile least signific…