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physics.app-ph2020★ 122 cited
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
Mengwei Si, Joseph Andler, Xiao Lyu +4
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-curre…
physics.app-ph2019★ 100 cited
Phase Field Modeling of Domain Dynamics and Polarization Accumulation in Ferroelectric HZO
Atanu K Saha, Kai Ni, Sourav Dutta +2
In this work, we investigate the accumulative polarization (P) switching characteristics of ferroelectric (FE) thin films under the influence of sequential electric-field pulses. B…