Towards Mott design by $\delta$-doping of strongly correlated titanates

Abstract

Doping the distorted-perovskite Mott insulators LaTiO${}_3$ and GdTiO${}_3$ with a single SrO layer along the [001] direction gives rise to a rich correlated electronic structure. A realistic superlattice study by means of the charge self-consistent combination of density functional theory with dynamical mean-field theory reveals layer- and temperature-dependent multi-orbital metal-insulator transitions. An orbital-selective metallic layer at the interface dissolves via an orbital-polarized doped-Mott state into an orbital-ordered insulating regime beyond the two conducting TiO${}_2$ layers. We find large differences in the scattering behavior within the latter. Breaking the spin symmetry in $\delta$-doped GdTiO${}_3$ results in blocks of ferromagnetic itinerant and ferromagnetic Mott-insulating layers which are coupled antiferromagnetically.

17 pages, 9 figures, final version

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Cited by in corpus (3)

• Realistic theory of electronic correlations in nanoscopic systems
• Separation of transport lifetimes in SrTiO3-based two-dimensional electron liquids
• Spatial inhomogeneity and the metal-insulator transition in Ca${}_3$(Ru${}_{1-x}$Ti${}_x$)${}_2$O${}_7$