High-density two-dimensional small polaron gas in a delta-doped Mott insulator
arXiv:1404.2556 · doi:10.1038/srep03284
Abstract
Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting a single (GdO)+1 plane with a monolayer of charge neutral SrO to produce a two-dimensional system with high planar doping density. Unlike metallic SrTiO3 quantum wells in GdTiO3 the single SrO delta-doped layer exhibits thermally activated DC and optical conductivity that agree in a quantitative manner with predictions of small polaron transport but with an extremely high two-dimensional density of polarons, ~ 7E14 cm-2
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Cited by in corpus (7)
- Real-time decay of a highly excited charge carrier in the one-dimensional Holstein model
- Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides
- Correlation between metal-insulator transitions and structural distortions in high-electron-density SrTiO3 quantum wells
- Towards Mott design by -doping of strongly correlated titanates
- Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO embedded in GdTiO
- Determining a hopping polarons bandwidth from its Seebeck coefficient: Measuring the disorder energy of a non-crystalline semiconductor
- Polaron transport of amorphous semiconductors with embedded crystallites