activity
20082014
most citedElectrostatic carrier doping of GdTiO3/SrTiO3 interfaces

245 citations · 538 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.str-el2014★ 27 cited

High-density two-dimensional small polaron gas in a delta-doped Mott insulator

Daniel G. Ouellette, Pouya Moetakef, Tyler A. Cain +4

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions…

cond-mat.str-el2014★ 2 cited

Gaps and pseudo-gaps at the Mott quantum Critical point in the perovskite rare earth nickelates

S. James Allen, Adam J. Hauser, Evgeny Mikheev +8

We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transit…

cond-mat.mes-hall2013★ 30 cited

Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure

Adam P. Kajdos, Daniel G. Ouellette, Tyler A. Cain +1

A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulation doping by interfacing undoped SrTiO3 with a wider-band-gap material, SrTi1-xZrxO3, that is doped n-type wi…

cond-mat.str-el2013★ 68 cited

Shubnikov-de Haas effect in low electron density SrTiO3: Conduction band edge of SrTiO3 redux

S James Allen, Bharat Jalan, SungBin Lee +5

The Shubnikov-de Haas effect is used to explore the conduction band edge of high mobility SrTiO3 films doped with La. The results largely confirm the earlier measurements by Uwe et…

cond-mat.mtrl-sci2013

Self-assembled ErSb nanostructures of tunable shape and orientation: growth and plasmonic properties

Hong Lu, Daniel G. Ouellette, Sascha Preu +5

Self-assembled, semimetallic ErSb single crystal nanostructures, grown by molecular beam epitaxy, are embedded within a semiconductor GaSb matrix. Formation, evolution and orientat…

cond-mat.mes-hall2012★ 36 cited

Quantum oscillations from a two-dimensional electron gas at a Mott/band insulator interface

Pouya Moetakef, Daniel G. Ouellette, James R. Williams +4

We report on the magnetotransport properties of a prototype Mott insulator/band insulator perovskite heterojunction in magnetic fields up to 31 T and at temperatures between 360 mK…