Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO/SrTiO interface
arXiv:1503.05730 · doi:10.1103/PhysRevB.90.235426
Abstract
Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO/SrTiO interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.
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Cited by in corpus (5)
- Gate-tunable band structure of the LaAlO-SrTiO interface
- Side gate tunable Josephson junctions at the LaAlO/SrTiO interface
- Magneto-transport study of top- and back-gated LaAlO/SrTiO heterostructures
- Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO/SrTiO interfaces on -doping
- Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces