Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure

Abstract

We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAl}{\mathrm{O}}_3/SrTi{\mathrm{O}}_3$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAl}{\mathrm{O}}_3$/$\mathrm{SrTi}{\mathrm{O}}_3$ contacts and the current through a narrow channel of insulating $\mathrm{SrTi}{\mathrm{O}}_3$ is controlled via an electrostatic side gate. Drain-source I/V-curves have been measured at low and elevated temperatures. The transistor shows strong electric-field and temperature-dependent behaviour with a steep sub-threshold slope %of up to as small as $10mV/decade$ and a transconductance as high as $g_m\approx 22\mu A/V$. A fully consistent transport model for the drain-source tunneling reproduces the measured steep sub-threshold slope.

20 pages, 6 figures, Supplementary material: 4 pages, 2 figures

References in corpus (3)

• Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO${}_3$/SrTiO${}_3$ interface
• Side gate tunable Josephson junctions at the LaAlO${}_3$/SrTiO${}_3$ interface
• Tunneling into a quantum confinement created by a single-step nano-lithography of conducting oxide interfaces