Tunneling into a quantum confinement created by a single-step nano-lithography of conducting oxide interfaces
arXiv:1606.09340 · doi:10.1103/PhysRevB.94.045120
Abstract
A new nano-lithography technique compatible with conducting oxide interfaces, which requires a single lithographic step with no additional amorphous layer deposition or etching, is presented. It is demonstrated on SrTiO3/LaAlO3 interface where a constriction is patterned in the electron liquid. We find that an additional back-gating can further confine the electron liquid into an isolated island. Conductance and differential conductance measurements show resonant tunneling through the island. The data at various temperatures and magnetic fields are analyzed and the effective island size is found to be of the order of 10nm. The magnetic field dependence suggests absence of spin degeneracy in the island. Our method is suitable for creating superconducting and oxide-interface based electronic devices.
arXiv comment6 pages, 5 figures
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Cited by in corpus (9)
- Physics of SrTiO-based heterostructures and nanostructures: a review
- Superconducting quantum point contact with split gates in the two dimensional LaAlO3/SrTiO3 superfluid
- Quantized critical supercurrent in SrTiO-based quantum point contacts
- Electric dipole spin resonance in single and two electron quantum dot defined in two-dimensional electron gas at the SrTiO/LaAlO interface
- Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure
- Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces
- Scanning gate microscopy probing of anisotropic electron flow in a two dimensional electron gas at the (110) interface: A theoretical investigation
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- High-quality Nano-patterning of Oxide Interfaces Using Transferred Gold Mask