One-dimensional Quantum Wire Formed at the Boundary Between Two Insulating LaAlO3/SrTiO3 Interfaces

Abstract

We grow a tiled structure of insulating two dimensional LaAlO3/SrTiO3 interfaces composed of alternating one and three LaAlO3 unit cells. The boundary between two tiles is conducting. At low temperatures this conductance exhibits quantized steps as a function of gate voltage indicative of a one dimensional channel. The step size of half the quantum of conductance is an evidence for absence of spin degeneracy.

4 pages 4 figures

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Cited by in corpus (19)

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• Physics of SrTiO${}_3$-based heterostructures and nanostructures: a review
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• Tuning Pairing Amplitude and Spin-Triplet Texture by Curving Superconducting Nanostructures
• Micrometer-scale ballistic transport of electron pairs in LaAlO3/SrTiO3 nanowires
• Anomalous magnetic ground state in LaAlO3/SrTiO3 interface probed by transport through nanowires
• Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors
• Tunneling into a quantum confinement created by a single-step nano-lithography of conducting oxide interfaces
• Ferroelectric Exchange Bias Affects Interfacial Electronic States
• Artificial Atoms Based on Correlated Materials
• Non-universal current flow near the metal-insulator transition in an oxide interface
• Quantized critical supercurrent in SrTiO${}_3$-based quantum point contacts
• Negative Tunneling Magneto-Resistance in Quantum Wires with Strong Spin-Orbit Coupling
• Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces
• Electronic transport in sub-micrometric channels at the LaAlO${}_3$/SrTiO${}_3$ interface
• Nanopatterning process based on epitaxial masking for the fabrication of electronic and spintronic devices made of La0.67Sr0.33MnO3/LaAlO3/SrTiO3 heterostructures with in situ interfaces
• Spin-orbit coupled transport in a curved quantum wire
• Graphene-Complex-oxide Nanoscale Device Concepts