Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors
arXiv:1612.03921 · doi:10.1088/2053-1583/4/2/021012
Abstract
Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS, the thickness-dependent band structure implies the possibility of band realignment and a new interface charge state with properties distinct from the isolated layers. In this report, we probe the interface charge state using scanning photocurrent microscopy and gate-dependent transport with source-drain bias applied along the interface. Enhanced photoresponse observed at the interface is attributed to band bending. The effective conductivity of a material with a monolayer-multilayer interface of MoS is demonstrated to be higher than that of independent monolayers or multilayers of MoS. A classic heterostructure model is constructed to interpret the electrical properties at the interface. Our work reveals that the band engineering at the transition metal dichalcogenides monolayer/multilayer interfaces can enhance the longitudinal conductance and field-effect mobility of the composite monolayer and multilayer devices.
11 pages, 4 figures, supplementary information
References in corpus (7)
- Single-Layer MoS2 Phototransistors
- Large and tunable photo-thermoelectric effect in single-layer MoS2
- Direct imaging of the band profile in single layer on graphite: quasiparticle energy gap, metallic edge states and edge band bending
- Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy
- Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
- Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors
- One-dimensional Quantum Wire Formed at the Boundary Between Two Insulating LaAlO3/SrTiO3 Interfaces