Negative Tunneling Magneto-Resistance in Quantum Wires with Strong Spin-Orbit Coupling

Abstract

We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire (QW) with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the QW axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the QW. The results may provide a possible explanation for the sign-switching anisotropic TMR recently observed in the LaAlO${}_3$/SrTiO${}_3$ interface.

5 pages; 3 figures; arguments refined; figures revised

References in corpus (7)

• Magnetic effects at the interface between nonmagnetic oxides
• Avoiding the polarization catastrophe in LaAlO3 overlayers on SrTiO3(001) through a polar distortion
• Locally enhanced conductivity due to the tetragonal domain structure in LaAlO${}_3$/SrTiO${}_3$ heterointerfaces
• Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions
• Nanospintronics with carbon nanotubes
• Magnetoresistance of a quantum dot with spin-active interfaces
• One-dimensional Quantum Wire Formed at the Boundary Between Two Insulating LaAlO3/SrTiO3 Interfaces

Cited by in corpus (2)

• Tunneling conductance in two-dimensional junctions between a normal metal and a ferromagnetic Rashba metal
• Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces