Evidence for weak antilocalization-weak localization crossover and metal-insulator transition in CaCu${}_3$Ru${}_4$O${}_{12}$ thin films

Abstract

Artificial confinement of electrons by tailoring the layer thickness has turned out to be a powerful tool to harness control over competing phases in nano-layers of complex oxides. We investigate the effect of dimensionality on transport properties of $d$-electron based heavy-fermion metal CaCu${}_3$Ru${}_4$O${}_{12}$. Transport behavior evolves from metallic to localized regime upon reducing thickness and a metal insulator transition is observed below 3 nm film thickness for which sheet resistance crosses $h/e^2\sim 25$k$\Omega$, the quantum resistance in 2D. Magnetotransport study reveals a strong interplay between inelastic and spin-orbit scattering lengths upon reducing thickness, which results in weak antilocalization (WAL) to weak localization (WL) crossover in magnetoconductance.

arXiv comment10 pages, 4 figures

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Cited by in corpus (2)

• Multi-band character revealed from Weak-antilocalization effect in Platinum thin films
• Stabilization of A-site ordered perovskites and formation of spin-half antiferromagnetic lattice: CaCu${}_3$Ti${}_4$O${}_{12}$ and CaCu${}_3$Zr${}_4$O${}_{12}$