Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method
arXiv:2001.03055 · doi:10.1016/j.mssp.2014.05.042
Abstract
Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be due to the semiconductor-to-metal phase transition (SMPT) in vanadium dioxide. The shift of the switching threshold voltage, accompanied by the memory effect, in forward bias of the p-Si-VO2 anisotype heterojunction is observed. To explain this effect, a model is proposed which suggests the existence of an additional series resistance associated with a channel at the VO2/Si interface, where a SiOx layer forms during the VO2 deposition process. This resistance is responsible for both threshold switching characteristics, and the memory effect, and the oxygen ion electromigration process is shown to underlie this effect. Potential applications of the observed phenomena, combining the effects of ReRAM and SMPT, in oxide electronics are discussed.
arXiv comment12 pages, 5 figures
References in corpus (5)
- Voltage-triggered Ultra-fast Metal-insulator Transition in Vanadium Dioxide Switches
- Electric-field-driven phase transition in vanadium dioxide
- Correlated Electron Materials and Field Effect Transistors for Logic: A Review
- Vanadium oxide thin films and fibers obtained by acetylacetonate sol-gel method
- GaN / VO2 heteroepitaxial p-n junctions: Band offset and minority carrier dynamics