73 citations · 277 across the 7 of their papers we have counts for
7 papers
Revealing the Three-Dimensional Arrangement of Polar Topology in Nanoparticles
Chaehwa Jeong, Juhyeok Lee, Hyesung Jo +8
In the early 2000s, low dimensional systems were predicted to have topologically nontrivial polar structures, such as vortices or skyrmions, depending on mechanical or electrical b…
Glass-like Electronics in Vanadium Dioxide
Mohammad Samizadeh Nikoo, Reza Soleimanzadeh, Anna Krammer +5
Functional materials can offer new paradigms for miniaturized and energy-efficient electronics, providing a complementary or even alternative platform to metal-oxide-semiconductors…
Gaps and pseudo-gaps at the Mott quantum Critical point in the perovskite rare earth nickelates
S. James Allen, Adam J. Hauser, Evgeny Mikheev +8
We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transit…
Structural origins of the properties of rare earth nickelate superlattices
Jinwoo Hwang, Junwoo Son, Jack Y. Zhang +3
NiO6 octahedral tilts in the LaNiO3/SrTiO3 superlattices are quantified using position averaged convergent beam electron diffraction in scanning transmission electron microscopy. I…
Nanoscale Quantification of Octahedral Tilts in Perovskite Films
Jinwoo Hwang, Jack Y. Zhang, Junwoo Son +1
NiO6-octahedral tilts in ultrathin LaNiO3 films were studied using position averaged convergent beam electron diffraction (PACBED) in scanning transmission electron microscopy. Bot…
Probing the metal-insulator transition of NdNiO3 by electrostatic doping
Junwoo Son, Bharat Jalan, Adam P. Kajdos +3
Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band fil…
A heterojunction modulation-doped Mott transistor
Junwoo Son, Siddharth Rajan, Susanne Stemmer +1
A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator…