A comparative DMFT study of the eg-orbital Hubbard model in thin films
arXiv:1310.5818 · doi:10.1103/PhysRevB.89.085122
Abstract
Heterostructures of transition-metal oxides emerged as a new route to engineer electronic systems with desired functionalities. Motivated by these developments, we study a two-orbital Hubbard model in a thin-film geometry confined along the cubic [001] direction using the dynamical mean-field theory. We contrast the results of two approximate impurity solvers (exact diagonalization and one-crossing approximation) to the results of the numerically exact continuous-time quantum Monte Carlo solver. Consistent with earlier studies, we find that the one-crossing approximation performs well in the insulating regime, while the advantage of the exact-diagonalization based solver is more pronounced in the metallic regime. We then investigate various aspects of strongly correlated eg-orbital systems in thin film geometries. In particular, we show how the interfacial orbital polarization dies off quickly a few layers from the interface and how the film thickness affects the location of the interaction-driven Mott transition. In addition, we explore the changes in the electronic structure with varying carrier concentration and identify large variations of the orbital polarization in the strongly correlated regime.
11 pages, 11 figures
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- Two-site fluctuations and multipolar superexchange interactions in strongly correlated systems
- Correlation effects in pyrochlore iridate thin films grown along the direction
- Reliability of the one-crossing approximation in describing the Mott transition
- Suppression of the Mott insulating phase in the particle-hole asymmetric Hubbard model
- Characterizing Featureless Mott Insulating State by Quasiparticle Interferences - A Dynamical Mean Field Theory Prospect