Characterizing Featureless Mott Insulating State by Quasiparticle Interferences - A Dynamical Mean Field Theory Prospect

Abstract

The quasiparticle interferences (QPIs) of a Mott insulator are investigated using the $T$-matrix formalism implemented with the dynamical mean-field theory ($T$-DMFT). In Mott insulating state, because DMFT predicts a singularity in the real part of the electron self energy $\Re \Sigma (\omega )\sim \eta /\omega$ at low frequency, where $\eta$ can be considered as the 'order parameter' for Mott insulating state, QPIs are completely washed out at the small bias voltage. However, a further analysis shows that $\Re \Sigma (\omega )$ in fact serves as an energy-dependent chemical potential shift. As a result, the effective bias voltage seen by the system is $e{V}^{\prime }=eV-\Re \Sigma (eV)$. Due to the singular behavior of $\Re \Sigma (\omega )$, a critical bias voltage $e{V}_c=\sqrt{\eta }$ satisfying $e{V}^{\prime }=0$ exists if and only if in Mott insulating state. Consequently, the same QPI patterns produced by the non-interacting Fermi surfaces appears at this critical bias voltage $e{V}_c$ in Mott insulating state. We propose that this reentry of non-interacting QPI patterns at $e{V}_c$ could serve as an experimental signature of Mott insulating state, and the 'order parameter' can be experimentally measured as $\eta \sim (e{V}_c{)}^2$.

5 pages, 3 figures, typos corrected, more references added

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Cited by in corpus (1)

• T-matrix formulation of real-space dynamical mean-field theory and the Friedel sum rule for correlated lattice fermions