Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions

Abstract

We report on a theoretical study of the electronic interface reconstruction (EIR) induced by polarity discontinuity at a heterojunction between a polar and a nonpolar Mott insulators, and of the two-dimensional strongly-correlated electron systems (2DSCESs) which accompany the reconstruction. We derive an expression for the minimum number of polar layers required to drive the EIR, and discuss key parameters of the heterojunction system which control 2DSCES properties. The role of strong correlations in enhancing confinement at the interface is emphasized.

7 pages, 6 figures, some typos corrected

References in corpus (5)

• Lattice polarization effects on electron-gas charge densities in ionic superlattices
• Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4
• Modulation Doping near Mott-Insulator Heterojunctions
• Electronic thermal transport in strongly correlated multilayered nanostructures
• The Electronic States of Two Oppositely doped Mott Insulators Bilayers

Cited by in corpus (5)

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• Embedding approach for dynamical mean field theory of strongly correlated heterostructures
• Aspects of metallic low-temperature transport in Mott-insulator/ band-insulator superlattices: optical conductivity and thermoelectricity
• Quantum Wells in Polar-Nonpolar Oxide Heterojunction Systems
• Hubbard-Thomas-Fermi Theory of Transition Metal Oxide Heterostructures